Page 244 - 2024-Vol20-Issue2

240 | Ahmed, Alsaif & Algwari

TABLE I.
RESULTS OF SIMULATIONS OF KEY CHARACTERISTICS OF CONVENTIONAL SOLAR CELLS AND INAS/GAAS QUANTUM

DOTS SOLAR CELLS WITH VARIOUS NUMBERS OF QD LAYERS

Device p-i-n without QD 1-layer QD 5-layers QD 10-layers QD 15-layers QD 20-layers QD
Jsc(mA/cm2) 16.4047 34.1625 35.5917 37.1026 38.3309 39.4775
0.908847 0.928569 0.93004 0.931544 0.93456 0.933705
Voc (volts) 83.977 84.21370 84.1527 84.07935 83.9353 83.97019
FF (%) 12.51586 26.7046 27.8457 29.0493 30.0569 30.94025
PCE(%)

Fig. 6. Typical power curve with InGaP solar cell with Fig. 7. Power conversion efficiency (PCE) of InAs/GaAs QD
various InAs QD layer counts. solar cells as function of the number of QDs layers.

sponse of standard solar cell is low compared to the response
of the solar cell in the presence of QDs layers.

V. CONCLUSIONS Fig. 8. The spectral response as a function of wavelength.

In this study, the capabilities of (SILVACO Software) are
employed to modeled and simulated of InAs quantum dots
material to improve the characteristic parameters. The cre-
ation of a comprehensive data library of material parameters,
models with various settings are generated and simulated.
Several outcomes that attained are displayed and discussed.
First, inserting (1, 5, 10, 15, and 20 layers) of InAs/GaAs QDs
into the p-i-n GaAs increases the power conversion efficiency
from 12.515% to 30.94%. Second, the absorption range edge
of photons with low energies is extended from (400 nm to 900
nm) by inserting multiple layers of InAs/GaAs QDs inside the
i-region of p-i-n GaAs. However, the results explained that
(QDs) technique give a significant value for different parame-
ters (FF, Jsc, Voc, and PCE) that increased and improve solar
cell operation. This study shows that (QD) solar cell are still
have some deficiencies and more advances are needed.