Cover
Vol. 21 No. 2 (2025)

Published: December 16, 2025

Pages: 129-135

Original Article

Investigation of InAlGaN/GaN HEMT Device with SiC Substrate and Cap Layer in Self Heating Resistance for Microwave Applications

Marwah Merza 1 Khalid Mohamed 2
1Mechatronics Engineering Department, College of Engineering, University of Mosul, Mosul, Iraq
2Electrical Engineering Department, College of Engineering, University of Mosul, Mosul, Iraq
History
  • Received: October 26, 2023
  • Revised: January 5, 2024
  • Accepted: February 23, 2024
  • Available Online: January 20, 2025
DOI

https://doi.org/10.37917/ijeee.21.2.13

Abstract

The electrical and radio frequency (RF) characteristics of InAlGaN/GaN high electron mobility transistors (HEMTs) device with cap layer are presented in this work. In this work, Silicon carbide was used as a substrate for its excellent thermal conductivity. Here, the thermal model was used to investigate the simulation of temperature distribution at 300k. Moreover, the DC and AC performance characteristics of the device were investigated using Silvaco Atlas Technology Computer Aided Design TCAD simulator. The results showed that, the maximum obtained drain current that was 1.35 A. In addition to, the RF parameters were extracted. The cut-off frequency ft is (73 GHz), the maximum oscillation frequency fmax is (353 GHz), maximum stable gain (Gms) and maximum available gain (Gma) with a value of about (116 dB). The obtained results showed that the InAlGaN/GaN HEMT device based on SiC performance is suitable for microwave applications.

Keywords

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