Search Results for x-ray-diffraction-

Abstract

The mixture (CdS-CdSe) thin films were fabricated by the thermal evaporation technique under very low pressures with a deposition rate (R) of 0.2 nm/sec and a 400 nm thickness (TH). The photoelectric and thermal properties of these films have been studied at different base layer temperatures. It was found that there is a linear relationship between the base layer (substrate) temperature and photocurrent of these photosensitive films. There has been a very influential parameter on the samples, which is the substrate temperature (Ts), where the optimum Ts was (170 °C) with a high adhesion coefficient. The sample that was deposited at this Ts, has good properties compared to other samples. Also, there is a direct relationship between the surface current and the operating temperature for fabricated films. X-ray diffraction (XRD) tests were taken for fabricated films which have been identified as polycrystalline with hexagonal and cubic-phase structures with different directional roles. The dominant direction of CdS 002 and 111 for CdSe. Analysis for films that were fabricated at (210 oC) and (90oC) shows an excess of (S) and (Cd) respectively. This condition greatly affects the film resistivity. In future work, new and different results can be obtained using different preparation parameters.