Cover
Vol. 4 No. 1 (2008)

Published: September 30, 2008

Pages: 54-63

Original Article

Theoretical Model for Heterojunction Phototransistor in Optoelectronic Switch Configurations Part II: Speed of Switching Operation

Fadil R. Tahir 1 Raad S. Fyath
1Department of Electrical Engineering, College of Engineering, University of Basrah, Basrah-Iraq
History
  • Received: July 30, 2008
  • Available Online: September 30, 2008
DOI

https://doi.org/10.37917/ijeee.4.1.4

Abstract

The aim of this paper is to investigate the switching characteristics of hetrojunction phototransistor (HPT). First, the static characteristics of the HPT are given under ideal conditions to get a physical insight on the main parameters affecting it's response. Then the speed of response of HPT is addressed and supported by simulation results reported for $1.3~\mu m$ InGaAs/InP transistor.

Keywords

References

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  3. S. M. Sze, "Physical of semicondenser Device," John Wiley, New York (1982).
  4. R. A. Milan, "An analysis of The Performance of Heterojunction Phototransistor for Fiber Optic Communications," IEEE Trans. Electrol Devices, Vol. ED-29, No. 2, (1982).