Cover
Vol. 4 No. 1 (2008)

Published: September 30, 2008

Pages: 44-53

Original Article

Theoretical Model for Heterojunction Phototransistor in Optoelectronic Switch Configurations Part 1: Optical Gain Characteristics

F. R. Tahir 1 R. S. Fyath
1Department of Electrical Engineering, College of Engineering, University of Basrah, Basrah - Iraq
History
  • Received: July 30, 2008
  • Available Online: September 30, 2008
DOI

https://doi.org/10.37917/ijeee.4.1.3

Abstract

This paper presents a comprehensive analysis for the performance of heterojunction bipolar phototransistor (HPT) as an essential element for optoelectronic switch configurations. The theory of operation of the (HPT) is reviewed. Analytical expressions are drived for transistor current components, optical gain $G_{opt}$ and DC current gain $h_{FE}$ in common emitter configuration. The analysis enables one to study the influence of various structure parameters and incident optical power on the optical gain characteristics of the (HPT). Simulation results are presented for a $1.3~\mu m$ $\text{In}_{0.53}\text{Ga}_{0.47}\text{As}/\text{InP}$ structure.

Keywords

References

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