Merza M, Mohamed K. Investigation of InAlGaN/GaN HEMT Device with SiC Substrate and Cap Layer in Self Heating Resistance for Microwave Applications. IJEEE [Internet]. 2025 Jan. 20 [cited 2025 Dec. 29];21(2):129-35. Available from: https://ijeee.edu.iq/ijeee/article/view/591