MERZA, Marwah; MOHAMED, Khalid. Investigation of InAlGaN/GaN HEMT Device with SiC Substrate and Cap Layer in Self Heating Resistance for Microwave Applications. Iraqi Journal for Electrical and Electronic Engineering, [S. l.], v. 21, n. 2, p. 129–135, 2025. DOI: 10.37917/ijeee.21.2.13. Disponível em: https://ijeee.edu.iq/ijeee/article/view/591. Acesso em: 29 dec. 2025.