Merza, Marwah, and Khalid Mohamed. “Investigation of InAlGaN GaN HEMT Device With SiC Substrate and Cap Layer in Self Heating Resistance for Microwave Applications”. Iraqi Journal for Electrical and Electronic Engineering, vol. 21, no. 2, Jan. 2025, pp. 129-35, https://doi.org/10.37917/ijeee.21.2.13.